A Micromachined Dual-Band Orthomode Transducer
A Micromachined Dual-Band Orthomode Transducer
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DOI：
10.1109/tmtt.2013.2292611
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发表时间：
2014
影响因子：
4.3
通讯作者：
C. Leal-Sevillano;Yingtao Tian;M. Lancaster;J. Ruiz‐Cruz;J. R. Montejo-Garai;J. Rebollar
中科院分区：
文献类型：
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作者：
C. Leal-Sevillano;Yingtao Tian;M. Lancaster;J. Ruiz‐Cruz;J. R. Montejo-Garai;J. Rebollar
本文提出了一种用于双波段工作的正交模换能器（OMT），并针对叠层结构进行了优化。所提出的设计避免了使用隔膜，虹膜，引脚，或小的功能，并尽量减少所需的等厚微加工层的数量。通过这种方式，微机械加工制造被简化，使得所提出的设计成为高频应用和低成本批量生产的非常有吸引力的候选者。提出了一种W波段双频设计（每个频带中有一个不同的极化），每个频带的分数带宽超过10%，频带之间的间隔为30%。此外，适当的布线和分层弯曲被设计用于与输入/输出端口的相同取向的最佳标准接口。采用厚SU-8光刻胶微机械加工工艺制作了两个背靠背结构的OMT。共使用了六个堆叠的SU-8层，所有这些层的厚度均为635 μm。实验结果与工艺的容差和失调一致，验证了所提出的新型OMT设计。
In this paper, an orthomode transducer (OMT) for dual-band operation and optimized for stacked micromachined layers implementation is presented. The proposed design avoids the use of septums, irises, pins, or small features and minimizes the number of equal-thickness micromachined layers required. In this way, the micromachining fabrication is simplified, making the proposed design a very attractive candidate for high frequency applications and for low-cost batch production. A W-band dual-band design (one different polarization in each frequency band) with more than 10% fractional bandwidth for each band and 30% separation between bands is presented. In addition, proper routing and layered bends are designed for an optimum standard interfacing with the same orientation of the input/output ports. Two OMTs in a back-to-back configuration are fabricated using a thick SU-8 photo-resist micromachining process. A total of six stacked SU-8 layers, all of them with the same thickness of 635 μm, are used. The experimental results are coherent with the tolerance and misalignment of the process, validating the proposed novel OMT design.