Fabrication of multiperiod Si/SiO2 /Ge layered structure through chemical bond manipulation
Fabrication of multiperiod Si/SiO2 /Ge layered structure through chemical bond manipulation
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通过化学键操纵制备多周期Si/SiO2/Ge层状结构
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
Y. Masumoto
中科院分区：
文献类型：
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作者：
K. Prabhakaran;T. Matsumoto;T. Ogino;Y. Masumoto
本文报道了一种制备多周期纳米Si/SiO_2/Ge层状结构的化学键操控方法。化学键操作是一种自组织过程，其涉及选择性地破坏和形成表面化学键，从而能够在全晶片规模上形成所需的物质。我们发现在Si（111）上形成的氧化锗层中的氧在随后的生长过程中被到达表面的Si原子吸收。这种现象涉及Ge-O键的断裂和Si-O键的形成，并导致形成夹在Si-Si氧化物层之间的Si-Si和Ge层，从而保持原始晶片形态。该材料在室温下受紫外激光激发时呈现蓝绿光发射。
In this letter, we report a method called chemical bond manipulation for fabrication of multiperiod nanometer sized Si/SiO2/Ge layered structure. Chemical bond manipulation is a self-organization process which involves selective breaking and making of surface chemical bonds and thereby enable formation of the desired species on a full wafer scale. We show that oxygen of germanium oxide layer formed on Si(111) are picked up by the Si atoms arriving at the surface during subsequent growth. This phenomenon involves breaking of Ge–O bonds and making of Si–O bonds and leads to the formation of ultrathin Si and Ge layers sandwiched between ultrathin silicon oxide layers, preserving the original wafer morphology. This material exhibits blue-green light emission at room temperature when excited by ultraviolet laser.