One-dimensional motion of interstitial clusters in iron-based binary alloys observed using a high-voltage electron microscope
One-dimensional motion of interstitial clusters in iron-based binary alloys observed using a high-voltage electron microscope
复制标题
使用高压电子显微镜观察铁基二元合金中间隙团簇的一维运动
DOI：
10.1016/j.jnucmat.2012.09.007
复制
发表时间：
2013
影响因子：
3.1
通讯作者：
H. Matsui
中科院分区：
文献类型：
--
作者：
T. Hamaoka;Y. Satoh;H. Matsui
利用高压电子显微镜对铁基二元合金中间隙团簇的一维运动进行了系统的实验研究，探讨了溶质原子尺寸因子对其一维运动的影响。溶质元素及其原子体积大小因子分别为铜（+17.53%）、锗（+16.48%）和硅（−7.88%）。溶质元素浓度为52 ~ 9100appm。在室温下测量电子辐照下的一维运动频率和距离。添加约50appm的铜或硅，降低了一维运动频率和距离。硅对一维运动频率的抑制作用强于铜。随着溶质浓度的增加，1D运动频率和距离进一步降低，但在100appm之后，它们对溶质浓度不敏感。假设单个溶质原子捕获间隙团簇并抑制其一维运动的模型，对稀合金的结果进行了检验。
Systematic experiments on one-dimensional (1D) motion of interstitial clusters in iron-based binary alloys were performed by in situ observation with a high-voltage electron microscope to investigate the effects of atomic size factor of solutes on 1D motion. The respective solute elements and their atomic volume size factors were copper (+17.53%), germanium (+16.48%), and silicon (−7.88%). The solute element concentrations were 52–9100appm. 1D motion frequency and distance were measured under electron irradiation at room temperature. Addition of copper or silicon of approximately 50appm reduced the 1D motion frequency and distance. Silicon decreased the 1D motion frequency more strongly than copper. The 1D motion frequency and distance were reduced further with increasing solute concentration, but after several 100appm, they became insensitive to it. Results for the dilute alloys were examined assuming a model by which individual solute atoms trap interstitial clusters and suppress their 1D motion.
登录
查看更多内容
影响因子：
1.6
作者：
Osetsky, YN;Bacon, DJ;Golubov, SI
通讯作者：
Golubov, SI
HVEM 辐照下钒和 V-5Ti 中 SIA 型环滑行运动的原位观察
DOI：
--
发表时间：
2002
期刊：
Journal of Nuclear Materials 307-311
影响因子：
--
作者：
H.Takano;N.Osakabe;K.Nogiwa 他
通讯作者：
K.Nogiwa 他
影响因子：
3.1
作者：
Arakawa, K;Hatanaka, M;Ono, K
通讯作者：
Ono, K
影响因子：
8.6
作者：
Arakawa, K;Hatanaka, M;Mori, H
通讯作者：
Mori, H