STI stress-induced increase in reverse bias junction capacitance
STI stress-induced increase in reverse bias junction capacitance
复制标题
STI 应力引起的反向偏置结电容增加
DOI：
10.1109/led.2002.1004219
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发表时间：
2002
影响因子：
4.9
通讯作者：
M. Mirabedini
中科院分区：
文献类型：
--
作者：
V. Gopinath;H. Puchner;M. Mirabedini
一个新的贡献反向偏置结电容的报告。该元件由沟槽隔离应力引起的带隙变窄引起，该带隙变窄改变了内建电势。实验结电容测量显示出良好的相关性模拟氧化应力。所报道的数据与基本器件方程的预测值吻合得很好。p/sup +//n（n/sup +// p）结在3.3V反向偏压下的应力诱导电容分别增加了12%（7.5%）。此外，还报道了与应力有关的反向结漏电流。随着沟槽变得更浅和更紧密，这种现象将变得越来越重要。
A new contribution to reverse-biased junction capacitance is reported. This component arises from trench isolation stress-induced bandgap narrowing that changes the built-in potential. Experimental junction capacitance measurements show good correlation to simulated oxidation stresses. The reported data agrees well with the predicted values from basic device equations. Stress induced capacitance increase of 12% (7.5%) at 3.3 V reverse bias for p/sup +//n (n/sup +// p) junctions, respectively is observed. In addition, well-understood reverse junction leakage relation to stress is also reported. This phenomenon will become increasingly important as trenches become shallower and more tightly spaced.