Investigation of point-defect cavity formed in two-dimensional photonic crystal slab with one-sided dielectric cladding
Investigation of point-defect cavity formed in two-dimensional photonic crystal slab with one-sided dielectric cladding
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DOI：
10.1063/1.2161387
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发表时间：
2006-01
影响因子：
4
通讯作者：
Yoshinori Tanaka;T. Asano;R. Hatsuta;S. Noda
中科院分区：
文献类型：
--
作者：
Yoshinori Tanaka;T. Asano;R. Hatsuta;S. Noda
研究了具有绝缘体上硅结构的二维光子晶体平板中形成的三缺孔点缺陷腔。理论分析表明，由于较小的折射率对比度，SiO_2包层一侧的辐射损失是空气包层一侧的四倍。此外，由于垂直结构的不对称性，由于横向电-横磁(TE-TM)耦合产生的面内辐射。TE-TM耦合损耗量与SiO_2包层辐射损耗量相当。实验结果与理论预测吻合较好。这种处理方法可以应用于单面介质包层结构和三维结构中的点缺陷腔。
Three-missing-hole point-defect cavities formed in a two-dimensional photonic crystal slab with a silicon-on-insulator structure are investigated. It is theoretically revealed that radiation loss to the SiO2-cladding side is four times higher than that to the air-cladding side due to the smaller refractive index contrast. In addition, in-plane radiation due to transverse electric-transverse magnetic (TE-TM) coupling occurs due to the vertical structural asymmetry. The amount of TE-TM coupling loss is comparable with that of radiation loss to the SiO2 cladding. Experimental results agreed well with theoretical predictions. This treatment can be applied to point-defect cavities in one-sided dielectric cladding structures and in three-dimensional configurations.