Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors

Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors
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DOI:
10.1016/j.ssc.2010.10.004
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发表时间:
2011
影响因子:
2.1
通讯作者:
H. Nakanotani;H. Kakizoe;C. Adachi
H. Nakanotani;H. Kakizoe;C. Adachi
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
H. Nakanotani;H. Kakizoe;C. Adachi

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