Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits
Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits
复制标题
硅大规模集成电路中离子注入损伤中心的电学磁共振检测
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
K. Hamada
中科院分区：
文献类型：
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作者：
T. Umeda;Y. Mochizuki;K. Okonogi;K. Hamada
在源/漏中检测到两种类型的缺陷（n - 1类型！）0.25 mm门长n沟道金属氧化物半导体场效应晶体管在lsi上的区域：~i！一个自旋为1的Si悬键~DB！空位-氧配合物对~DB - DB距离，R′0.6 nm)；和二~ !一系列更大的Si空位涉及远Si db （r> 1.4 nm）。这些空位型缺陷在Si lsi中比在体硅晶体中更热稳定。我们提出了两种增强稳定性的物理机制：内部机械应力和lsi活性区域的氧掺入。在研究了缺陷与电流电压特性之间的关系后，我们得出结论，这些缺陷分布在靠近栅极的近表面n - 1型区域，并且它们是栅极感应漏极泄漏电流的来源。©2003美国物理研究所。@DOI: 10.1063/1.1623608 #
Two types of defects were detected in the source/drain ( n 1 -type! region of 0.25-mm-gate-length n-channel metal oxide semiconductor field-effect-transistors on LSIs: ~i! a spin-1 Si dangling-bond ~DB! pair in divacancy‐oxygen complexes ~DB‐DB distance, R’0.6 nm); and ~ii! a series of larger Si vacancies involving distant Si DBs ( R>1.4 nm). These vacancy-type defects were much more thermally stable in Si LSIs than those in bulk Si crystals. We suggested two physical mechanisms for this enhanced stability: internal mechanical stress and oxygen incorporation in the active regions of LSIs. After examining the relationship between the defects and current‐voltage characteristics, we concluded that these defects are distributed in the near-surface n 1 -type region close to the gate and that they are the source of the gate-induced drain leakage currents. © 2003 American Institute of Physics. @DOI: 10.1063/1.1623608#