Thermal conductance of metal-metal interfaces
Thermal conductance of metal-metal interfaces
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DOI：
10.1103/physrevb.72.245426
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发表时间：
2005-12-01
影响因子：
3.7
通讯作者：
Averback, RS
中科院分区：
文献类型：
--
作者：
Gundrum, BC;Cahill, DG;Averback, RS
采用时域热反射法测量了78 < T < 298 K温度范围内Al/Cu界面的热导率。通过在蓝宝石衬底上的Cu层的顶部上磁控溅射沉积100 nm厚的Al膜来制备样品。使用1 MeV的Kr离子通过离子束混合系统地改变Al-Cu界面的化学稳定性。在室温下，Al-Cu界面的热导率为4 GW m（-2）K-1，比典型金属-电介质界面的声子介导热导率大一个数量级。电导的大小和线性的温度依赖性很好地描述了在界面处的电子输运的扩散失配模型。
The thermal conductance of interfaces between Al and Cu is measured in the temperature range 78 < T < 298 K using time-domain thermoreflectance. The samples are prepared by magnetron sputter deposition of a 100 nm thick film of Al on top of layers of Cu on sapphire substrates. The chemical abruptness of the Al-Cu interface is systematically varied by ion-beam mixing using 1 MeV Kr ions. The thermal conductance of the as-deposited Al-Cu interface is 4 GW m(-2) K-1 at room temperature, an order-of-magnitude larger than the phonon-mediated thermal conductance of typical metal-dielectric interfaces. The magnitude and the linear temperature dependence of the conductance are described well by a diffuse-mismatch model for electron transport at interfaces.