Probing itinerant carrier dynamics at the diamond surface using single nitrogen vacancy centers
Probing itinerant carrier dynamics at the diamond surface using single nitrogen vacancy centers
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DOI：
10.1063/5.0130761
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发表时间：
2022-10
影响因子：
4
通讯作者：
M. Mahdia;James J. Allred;Zhiyang Yuan;Jared Rovny;N. D. de Leon
中科院分区：
文献类型：
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作者：
M. Mahdia;James J. Allred;Zhiyang Yuan;Jared Rovny;N. D. de Leon
金刚石色中心在量子传感、计算和网络等领域的应用被广泛探索。它们的光学、自旋和电荷性质已被广泛研究，而它们与流动载流子的相互作用则相对未被探索。在这里，我们发现位于金刚石表面10±5 nm的NV中心可以通过空穴捕获转化为中性电荷态。通过测量孔洞捕获率，我们提取捕获截面，该截面由于接近金刚石表面而被抑制。距离依赖与载流子扩散模型一致，表明即使在金刚石表面，流动载流子寿命也可以很长。测量近表面NV中心的动力学为金刚石表面表征和研究金刚石器件中的电荷输运提供了一种工具。
Color centers in diamond are widely explored for applications in quantum sensing, computing, and networking. Their optical, spin, and charge properties have extensively been studied, while their interactions with itinerant carriers are relatively unexplored. Here, we show that NV centers situated 10 ± 5 nm of the diamond surface can be converted to the neutral charge state via hole capture. By measuring the hole capture rate, we extract the capture cross section, which is suppressed by proximity to the diamond surface. The distance dependence is consistent with a carrier diffusion model, indicating that the itinerant carrier lifetime can be long, even at the diamond surface. Measuring dynamics of near-surface NV centers offers a tool for characterizing the diamond surface and investigating charge transport in diamond devices.