Relationship between resistivity and phosphorus concentration in silicon
Relationship between resistivity and phosphorus concentration in silicon
复制标题
电阻率与硅中磷浓度的关系
DOI：
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发表时间：
1974
期刊：
影响因子：
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通讯作者：
L. Passari
中科院分区：
文献类型：
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作者：
F. Mousty;P. Ostoja;L. Passari
精确的电学和分析测量使我们能够确定掺杂硅中电阻率和磷浓度之间的关系。将这种关系与其他作者在n型硅的情况下获得的关系进行了比较，并讨论了由于各种掺杂剂而导致的差异。报告了通过分析技术和霍尔效应测量确定的浓度之间的差异。
Accurate electrical and analytical measurements allowed us to determine a relationship between resistivity and phosphorus concentration in doped silicon. This relationship is compared with that obtained by other authors in the case of n‐type silicon, and the differences due to the various doping agents are discussed. Differences between concentrations determined by analytical techniques and by Hall effect measurements are reported.