Effects of oxygen concentration on the electrical properties of ZnO films
Effects of oxygen concentration on the electrical properties of ZnO films
复制标题
DOI：
10.1016/j.ceramint.2007.09.105
复制
发表时间：
2008-05
影响因子：
5.2
通讯作者：
H. Kim;E. Jung;Won-Jae Lee;J. H. Kim;S. Ryu;Sung‐Yool Choi
中科院分区：
文献类型：
--
作者：
H. Kim;E. Jung;Won-Jae Lee;J. H. Kim;S. Ryu;Sung‐Yool Choi
研究了ZnO薄膜中氧含量对薄膜电学特性的影响。为了控制ZnO薄膜的氧含量，在N2和空气气氛中进行后热退火，提高了ZnO薄膜的结晶度和光学性能。通过俄歇电子能谱测量氧浓度。缺氧ZnO薄膜的电子浓度在1021 ~ 6× 1017 cm-3之间，电阻率在10 - 3-10 - 1Ωcm之间。另一方面，当ZnO薄膜中的氧浓度达到与Zn的化学计量比时，ZnO薄膜在− 1017 cm − 3处显示出低的电子浓度和10Ωcm的电阻率。
In this paper, electrical characteristics by various oxygen content in ZnO films were studied. To control the oxygen content of ZnO films, post-thermal annealing was performed in N2and air ambient, led to improve crystallinity and optical properties of ZnO films. The oxygen concentration was measured by Auger electron spectroscopy. The ZnO films having the deficiency of oxygen showed the electron concentrations between 1021and mid 6×1017cm−3and resistivity at 10−3–10−1Ωcm. On the other hand, when the oxygen concentration of the ZnO films was up to the stoichiometry with Zn, the ZnO films showed low electron concentration at −1017cm−3and resistivity at 10Ωcm.