Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory
Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory
复制标题
通过在非晶碳存储器中引入银纳米团簇改善电阻开关特性
DOI：
10.1016/j.matlet.2015.04.052
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发表时间：
2015
影响因子：
3
通讯作者：
Liu Yichun
中科院分区：
文献类型：
--
作者：
Zhang Lei;Xu Haiyang;Wang Zhongqiang;Zhao Xiaoning;Ma Jiangang;Liu Yichun
基于Ag/非晶碳（a-C）/Pt三明治结构，实现了双极连续开关（RS）存储器。在这里，银纳米团簇（NC）嵌入到a-C膜通过溅射沉积和热团聚。与没有Ag-NC的装置相比，Ag-NC在a-C膜中的嵌入有利于形成不完整的Ag导电丝（CF）。这可以用作RS的头端电极。其中，局部电场可以被增强和集中并且导致简化的CF结构。因此，将适当浓度的Ag-NC嵌入电解质层中可以有效地降低形成/切换电压并改善RS均匀性。
Bipolar resistive-switching (RS) memories were demonstrated based on an Ag/amorphous-carbon (a-C)/Pt sandwich structure. Here, the Ag-nanoclusters (NCs) were embedded into the a-C film via the sputtering deposition and thermal agglomeration. Versus the device without Ag-NCs, the embedding of the Ag-NCs in the a-C film favors the formation of incomplete Ag conducting filaments (CFs). This can act as tip electrodes for the RS. Therein, the local electric field can be enhanced and concentrated and lead to a simplified CF structure. Therefore, embedding Ag-NCs with a proper concentration into the electrolyte layer can effectively decrease the forming/switching voltages and improve the RS uniformity.