From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer
From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer
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DOI：
10.1063/1.2817941
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发表时间：
2007-12
影响因子：
4
通讯作者：
R. Songmuang;O. Landré;B. Daudin
中科院分区：
文献类型：
--
作者：
R. Songmuang;O. Landré;B. Daudin
我们证明了薄的AlN缓冲层改善了Si（111）上生长的GaN纳米线的取向。沉积的GaN最初形成岛状，其充当线的种子。通过提高衬底温度，生长材料的实际量减少，但线密度增加，并实现良好分离的线。在高生长温度下的快速线长生长速率被分配到吸附原子扩散的增强。活性氮的供给速率决定了体长增长速率的上限。
We demonstrate that thin AlN buffer layers improve the orientation of GaN nanowire grown on Si(111). The deposited GaN initially forms into islands which act as a seed for the wires. By raising substrate temperature, the actual amount of grown material decreases but wire density increases and well-separated wires are achieved. Fast wire length growth rate at high growth temperature is assigned to an enhancement of adatom diffusion. The upper limit of length growth rate is determined by the supply rate of active nitrogen.