Selective secondary nucleation controlled (001)-texture in boron doped diamond films by increasing the concentrations of tetramethylsilane and trimethylborane
Selective secondary nucleation controlled (001)-texture in boron doped diamond films by increasing the concentrations of tetramethylsilane and trimethylborane
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DOI：
10.1016/j.surfcoat.2014.10.035
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发表时间：
2014-11
影响因子：
5.4
通讯作者：
H. Zhuang;Haiyuan Fu;Xin Jiang
中科院分区：
文献类型：
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作者：
H. Zhuang;Haiyuan Fu;Xin Jiang
金刚石具有各向异性的物理和化学性质，这取决于它的晶体取向。然而，由于缺乏大规模的单晶金刚石衬底，织构金刚石薄膜的生长成为一种流行的方式，以定制其光学，电学，机械和热性能的特定应用。在目前的研究中，我们表明，（001）-织构的硼掺杂金刚石（BDD）薄膜可以控制的选择性二次成核过程。为了实现这一点，引入低浓度的四甲基硅烷（TMS），以在非{001}金刚石刻面上诱导高的二次成核速率，从而阻碍它们的横向生长。相反，{001}晶面保持连续生长和扩展，从而形成（001）织构金刚石薄膜。此外，膜的取向可以通过在相对大的参数窗口内增加气相中TMS或三甲基硼烷（TMB）的浓度来连续改善。该研究不仅为控制金刚石织构提供了新的机理，而且对金刚石生长的基础研究具有一定的指导意义。
Diamond shows anisotropic physical and chemical properties, depending on its crystallographic orientations. Owing to the lack of large-scale single crystalline diamond substrates, however, the growth of textured diamond film becomes a popular way in tailoring its optical, electrical, mechanical, and thermal properties for specific applications. In the present study, we show that the (001)-texture of boron doped diamond (BDD) thin film can be controlled by a selective secondary nucleation process. To achieve this, a low concentration of tetramethylsilane (TMS) was introduced to induce a high secondary nucleation rate on the non-{001} diamond facets, hindering their lateral growth. In contrast, the continuous growth and expansion of the {001} facets are kept, which leads to the formation of (001)-textured diamond film. In addition, the orientation of the film can be continuously improved by increasing the concentration of either TMS or trimethylborane (TMB) in the gas phase within a relatively large parameter window. This study not only presents a new mechanism in controlling the textured of diamond, but also sheds some light on the fundamental research regarding the diamond growth.