24.3 A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio
24.3 A high-linearity CMOS receiver achieving +44dBm IIP3 and +13dBm B1dB for SAW-less LTE radio
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DOI：
10.1109/isscc.2017.7870436
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发表时间：
2017-02
期刊：
影响因子：
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通讯作者：
Yuanching Lien;E. Klumperink;B. Tenbroek;J. Strange;B. Nauta
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文献类型：
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作者：
Yuanching Lien;E. Klumperink;B. Tenbroek;J. Strange;B. Nauta
LTE高级无线接收器需要高线性度前置滤波，以防止带内信号被强带外（OOB）信号和来自发射器的自干扰破坏。SAW滤波器通常用于此目的，但支持过多的现有和新的频带变得很麻烦，每个频带都有单独的滤波器。在本文中，我们探讨了将隔离器与片上滤波相结合的可能性。然而，即使采用15 dB隔离，片内滤波器也需要处理高达+10 dBm的TX泄漏和− 15 dBm的OOB阻塞，这需要极高的IIP 3（约为+50 dBm）和IIP 2（约为+90 dBm）。最近，基于无电感可调谐N通道滤波器的接收机实现了> 10 dBm的压缩点和20至30 dBm的良好IIP 3。为了进一步提高接收机的线性度，以满足无声表面波接收机极高的IIP 3要求，本文提出了一种高线性度的N路带通/陷波滤波器拓扑结构和接收机结构。
LTE-advanced wireless receivers require high-linearity up-front filtering to prevent corruption of the in-band signals by strong out-of-band (OOB) signals and self-interference from the transmitter. SAW duplexer filters are generally used for this purpose, but supporting the plethora of existing and new bands becomes troublesome with separate filters for each band. In this paper we explore the possibility of combining an isolator with on-chip filtering. However, even with 15dB isolation, the on-chip filter needs to deal with up to +10dBm TX leakage and −15dBm OOB blocking, which requires an extremely high IIP3 around +50dBm and IIP2 around +90dBm. Recently inductorless tunable N-path-filter-based receivers achieved >10dBm compression point and good IIP3 of 20 to 30dBm. In order to further improve the receiver linearity to approach the extremely high IIP3 requirement for a SAW-less receiver, a high-linearity N-path bandpass/notch filter topology and receiver architecture are proposed in this paper.