Underwater annealing and texturing for enhancing electrical characteristics of n-aSi/p-cSi using Nd3+:YAG laser beam-overlap technique with a wavelength of 532 nm
Underwater annealing and texturing for enhancing electrical characteristics of n-aSi/p-cSi using Nd3+:YAG laser beam-overlap technique with a wavelength of 532 nm
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DOI：
10.1117/1.jpe.6.014001
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发表时间：
2016
影响因子：
1.7
通讯作者：
Y. E. B. Vidhya;N. Vasa
中科院分区：
文献类型：
--
作者：
Y. E. B. Vidhya;N. Vasa
抽象的。利用脉冲激光束重叠技术研究了激光束形状对非晶硅薄膜在水气氛中同时进行大面积晶化和织构化的影响。采用二次谐波波长为532 nm的调Q Nd 3+：YAG激光器，采用高斯型和平顶型两种不同的光束轮廓，对生长在单晶硅（c-Si）衬底上的1 μm厚非晶硅薄膜进行了退火处理。高密度和较小尺寸的锥形尖峰的晶粒尺寸增加了约25%和改善的光电导特性（9%至17%）进行激光处理后，在水中进行相比，在空气中。此外，与高斯光束轮廓相比，平顶光束轮廓也改善了晶体特性。在水下环境中的热建模的基础上的必要的激光能量密度范围是在良好的协议与实验测量值之间的150和600 mJ/cm 2。a-Si膜的形态、结晶和电特性的改善清楚地表明，用30%至50%的Nd 3+：YAG激光束重叠的水下退火和织构化适合于光伏应用。
Abstract. The influence of the laser beam profile on simultaneous wide-area crystallization and texturing of amorphous silicon (a-Si) thin films in water ambience is investigated by using a pulsed laser-beam-overlap technique. A Q-switched Nd3+:YAG laser with the second harmonic wavelength of 532 nm and different beam profiles, namely Gaussian and flat-top, was used for the annealing of 1-μm thick a-Si films deposited on crystalline silicon (c-Si) substrates. High density and smaller-sized conical spikes with an increase in grain size of around 25% and improved photoconductivity characteristics (9% to 17%) were observed after laser treatment was carried out in water when compared with that in air. Further, crystalline characteristics were also improved with the flat-top beam profile as compared with that of the Gaussian beam profile. The necessary laser fluence range based on the thermal modeling in the underwater ambience is in good agreement with the experimentally measured values between 150 and 600 mJ/cm2. The improvement in morphological, crystalline, and electrical characteristics of a-Si films clearly show that underwater annealing and texturing with the Nd3+:YAG laser beam-overlap of 30% to 50% is suitable for photovoltaic applications.