Aligned horizontal silica nanochannels by oxidative self-sealing of patterned silicon wafers
Aligned horizontal silica nanochannels by oxidative self-sealing of patterned silicon wafers
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DOI：
10.1021/cm062485h
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发表时间：
2007-01-09
影响因子：
8.6
通讯作者：
Goesele, Ulrich
中科院分区：
文献类型：
--
作者：
Chen, Xin;Ji, Ran;Goesele, Ulrich
阵列的对齐，水平的纳米通道制造的热氧化自密封的硅晶片中的凹槽。在凹槽底部的凹隅处的延迟氧化导致纳米通道的保存，而在底部上方，从凹槽的相对壁生长的氧化物层撞击。
Arrays of aligned, horizontal nanochannels were fabricated by thermal oxidative self-sealing of grooves in Si wafers. The retarded oxidation at the concave corners at the bottoms of grooves results in the preservation of nanochannels, whereas above the bottoms, the oxide layers growing from the opposite walls of the grooves impinge.