Chemical etching of silicon carbide in pure water by using platinum catalyst
Chemical etching of silicon carbide in pure water by using platinum catalyst
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DOI：
10.1063/1.4983206
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发表时间：
2017-05-15
影响因子：
4
通讯作者：
Yamauchi, K.
中科院分区：
文献类型：
--
作者：
Isohashi, Ai;Bui, P. V.;Yamauchi, K.
SiC的化学蚀刻被发现在纯水中进行与Pt催化剂的协助。将4 H-SiC（0001）晶片放置在纯水中的抛光垫上并使其滑动，在其上沉积薄Pt膜以提供催化性质。观察到晶片表面的蚀刻通过更频繁地与Pt膜相互作用而优先去除突起，从而使表面平坦化。在轴上晶片的情况下，获得具有直台阶和平台结构的晶体学有序表面，其高度对应于Si和C的原子双层的高度。腐蚀速率取决于Pt的电化学电位。在Pt表面裸露的电位下观察到邻位表面。的主要蚀刻机制是水解与Pt催化剂的援助。因此，这种方法可以用作环境友好和可持续的技术。出版社：AIP Publishing
Chemical etching of SiC was found to proceed in pure water with the assistance of a Pt catalyst. A 4H-SiC (0001) wafer was placed and slid on a polishing pad in pure water, on which a thin Pt film was deposited to give a catalytic nature. Etching of the wafer surface was observed to remove protrusions preferentially by interacting with the Pt film more frequently, thus flattening the surface. In the case of an on-axis wafer, a crystallographically ordered surface was obtained with a straight step-and-terrace structure, the height of which corresponds to that of an atomic bilayer of Si and C. The etching rate depended upon the electrochemical potential of Pt. The vicinal surface was observed at the potential at which the Pt surface was bare. The primary etching mechanism was hydrolysis with the assistance of a Pt catalyst. This method can, therefore, be used as an environmentally friendly and sustainable technology. Published by AIP Publishing.