High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire.
High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire.
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DOI：
10.1186/1556-276x-8-327
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发表时间：
2013-07-18
影响因子：
--
通讯作者：
Chang WC
中科院分区：
文献类型：
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作者：
Kuo CH;Wu JM;Lin SJ;Chang WC
采用金属-半导体-金属（M-S-M）结构，将单晶铟锑（InSb）纳米线制成中红外光电探测器。采用电化学方法在室温下合成了InSb纳米线。FET的特性显示电子浓度为3.6 × 1017 cm−3，电子迁移率为215.25 cm 2 V−1 s−1。该光电探测器具有良好的光电导性能、优异的稳定性、再现性、优异的上级响应度（8.4 × 104 A W−1）和量子效率（1.96 × 106%）。这些优良的上级性能归因于光电探测器的高表面积体积比和单晶1D纳米结构，其显著减少了在传输过程中的散射、捕获和电极之间的渡越时间。此外，M-S-M结构可以通过形成肖特基接触有效地增强空间电荷效应，这显著地有助于电子注入和光电流增益。
Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm−3 and an electron mobility of 215.25 cm2 V−1 s−1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W−1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.