Generation of triggerless silicon shunting plasma and ion extraction
Generation of triggerless silicon shunting plasma and ion extraction
复制标题
无触发硅分流等离子体的生成和离子提取
DOI：
10.1016/s0257-8972(01)01278-6
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发表时间：
2001
影响因子：
5.4
通讯作者：
Yuji Tani
中科院分区：
文献类型：
--
作者：
K. Yukimura;Yuji Tani
描述了脉冲硅“分流等离子体”的电特性，并与碳和铌分流等离子体进行了比较。等离子体的形成分为三个阶段。首先，固体材料被放电电流加热，然后在类似辉光的阶段期间进行表面放电，最后，通过对所选固体材料进行焦耳加热，将主等离子体形成为电弧。表面放电桥接硅板的时间对应于板两端电压的突然降低。流光等离子体桥接和突然的电压降低作为等离子体形成过程的最后阶段启动电弧放电。光发射光谱的观测表明，等离子体是由原来选择的固体材料。通过向靶施加脉冲电压，将离子电流从等离子体提取到附近的靶。所提取的电流取决于目标区域中的环境气体压力。对于2.7Pa的压力，在施加电压时出现尖锐的电流峰值，而对于133Pa的压力，形成矩形电流脉冲形状，类似于所施加的电压脉冲的形状。这可能是由于在浸没在分流等离子体中的靶周围形成基质鞘的结果。
The electrical characteristics of a pulsed silicon ‘shunting plasma’ are described and compared with carbon and niobium shunting plasmas. The plasma development occurs in three phases. Initially the solid material is heated by the discharge current, followed by a surface discharge during a glow-like phase, and finally the main plasma is formed as an arc by joule heating of the chosen solid material. The time at which the surface discharge bridges over the silicon plate corresponds to an abrupt decrease in voltage across the plate. Both streamer plasma bridging and an abrupt voltage decrease initiate the arc discharges as the final phase of the plasma formation process. Observations of optical emission spectra indicate that the plasma is composed of the original chosen solid material. Ion current is extracted from the plasma to a nearby target by application of a pulsed voltage to the target. The extracted current depends on the ambient gas pressure in the target region. For a pressure of 2.7 Pa a sharp current peak occurs upon application of voltage, while for a pressure of 133 Pa a rectangular current pulse shape is formed, similar to the shape of the applied voltage pulse. This may be a result of the formation of a matrix sheath surrounding the target that is immersed in the shunting plasma.