Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy
Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy
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DOI：
10.1016/j.optmat.2010.10.010
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发表时间：
2011-05-01
影响因子：
3.9
通讯作者：
Fujiwara, Y.
中科院分区：
文献类型：
--
作者：
Nishikawa, A.;Furukawa, N.;Fujiwara, Y.
我们获得了室温红色发射GaN基发光二极管（LED）使用Eu掺杂的GaN（GaN：Eu）作为有源层。在正常光照条件下观察到明亮的发光，这与Eu ~（3+）离子的4f壳层内跃迁有关。发光二极管的性能取决于GaN：Eu层的生长条件。由于高质量的GaN可以在更高的生长压力下生长，在大气压下生长的GaN：Eu有源层的LED中观察到强烈的电致发光（EL），这是由于GaN基质材料到Eu离子的能量转移效率的增强。在20 mA的直流电流下，光输出功率和外量子效率分别为17 μ W和0.04%。这些结果表明，GaN：Eu实现GaN基红光发射体的氮化物基单片光学器件的制造的可行性。(C)2010 Elsevier B. V.保留所有权利。
We obtained room-temperature red emission from GaN-based light-emitting diodes (LEDs) using a Eu-doped GaN (GaN:Eu) as an active layer. The bright emission was observed under normal lighting condition, which is associated with the intra-4f shell transition of Eu3+ ions. The LED properties depends on the growth condition of GaN:Eu layer. Since the high-quality GaN can be grown at higher growth pressure, the intense electroluminescence (EL) was observed in the LED with a GaN:Eu active layer grown at atmospheric pressure, which is due to the enhancement of the energy transfer efficiency from the GaN host material to the Eu ions. At a d.c. current of 20 mA, the light output power and external quantum efficiency were 17 mu W and 0.04%, respectively. These results indicate the feasibility of GaN:Eu to realize a GaN-based red emitter for fabrication of nitride-based monolithic optical devices. (C) 2010 Elsevier B.V. All rights reserved.