Novel behavior of bond-centered muonium in heavily doped n-type silicon: Curie-like spin susceptibility and charge screening.
Novel behavior of bond-centered muonium in heavily doped n-type silicon: Curie-like spin susceptibility and charge screening.
复制标题
重掺杂n型硅中以键为中心的锷的新行为：类居里自旋磁化率和电荷屏蔽。
DOI：
10.1103/physrevlett.84.2251
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发表时间：
2000
影响因子：
8.6
通讯作者：
R. Lichti
中科院分区：
文献类型：
--
作者：
K. Chow;R. Kiefl;B. Hitti;T. L. Estle;R. Lichti
在重掺杂n型Si：P中观察到了键中心的Mu(0)(BC)，它表现出居里式的电子自旋磁化率，这导致了Muon自旋进动频率的巨大负移。在高掺杂水平下，由自由载流子自旋交换模型得到的Mu(0)(BC)超精细参数明显低于本征Si中的超精细参数。这表明，电荷屏蔽效应显著地改变了金属Si：P中Mu(0)(BC)的自旋密度分布，这可能是高载流子浓度材料中深杂质的普遍现象。
Bond-centered muonium ( Mu(0)(BC)) has been observed in very heavily doped n-type Si:P. It exhibits a Curie-like electronic spin susceptibility which leads to a giant negative shift in the muon spin precession frequency. At high dopant levels, the Mu(0)(BC) hyperfine parameters, deduced from a model involving spin exchange with free carriers, are significantly reduced from those in intrinsic Si. This indicates that the spin density distribution for Mu(0)(BC) in metallic Si:P is altered significantly by charge screening effects, likely a general phenomenon for deep impurities in materials with high carrier concentrations.