SMART-II: a three-dimensional CAD model for submicrometer MOSFET's
SMART-II: a three-dimensional CAD model for submicrometer MOSFET's
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SMART-II：亚微米 MOSFET 的三维 CAD 模型
DOI：
10.1109/43.79499
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
H. Umimoto
中科院分区：
文献类型：
--
作者：
S. Odanaka;A. Hiroki;K. Ohe;K. Moriyama;H. Umimoto
作者描述了一个亚微米MOSFET的三维CAD模型。该模型已被实现在一个三维工艺/器件集成模拟器，SMART-II，使用超级计算机。热电子输运的MOS器件模型是基于一个修改的电流关系，包括在一个不均匀的领域中的电子温度效应。讨论了改进反型层迁移率模型和利用最近的平均自由程实验数据建立碰撞电离模型的必要性，重点讨论了小尺寸MOSFET从阈值区到雪崩区的I/V特性的数值模拟。结果表明，该方法在实现0.5 μ m MOSFET的三维CAD模型方面是有效的。该模型的应用揭示了小尺寸MOSFET雪崩击穿行为的三维效应。>
The authors describe a three-dimensional CAD model for submicrometer MOSFETs. The model has been implemented in a three-dimensional process/device integrated simulator, SMART-II, using a supercomputer. The MOS device model for hot electron transport is based on a modified current relation including an electron temperature effect in an inhomogeneous field. The need for an improved mobility model in an inversion layer and an impact ionization model using the recent experimental data for the mean free path is discussed with emphasis on the numerical simulation for I/V characteristics of small-geometry MOSFETs from the threshold regime to the avalanche regime. It is found that this approach is effective in realizing a three-dimensional CAD model for 0.5- mu m MOSFETs. An application of the model reveals a three-dimensional effect of avalanche breakdown behavior in small-geometry MOSFETs. >