Defect engineering in germanium
Defect engineering in germanium
复制标题
锗的缺陷工程
DOI：
10.1002/pssa.201300151
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
H. Bracht
中科院分区：
文献类型：
--
作者：
H. Bracht
现有技术的纳米电子器件主要在硅（Si）上制造。为了在先进的电子纳米器件中利用锗（Ge）的特性，必须控制器件制造的所有步骤。这特别涉及Ge中掺杂剂的扩散、掺杂和活化。本文综述了热平衡和非平衡条件下Ge中自扩散和掺杂扩散的机理。非平衡条件可以是，例如，通过辐照、注入和不稳定缺陷团簇的溶解来实现。在不同的实验条件下，介导的掺杂剂扩散和掺杂剂在Ge中的失活的缺陷反应进行了讨论。特别注意的是支付给所涉及的点缺陷和库仑相互作用，解释了掺杂剂扩散和掺杂剂失活的众多结果的电荷状态。控制空位V和自晶I的形成是开发成功的缺陷工程策略的关键，这些策略是实现Ge基器件制造目标所必需的。
State of the art nanoelectronic devices are mainly fabricated on silicon (Si). In order to take advantage of the properties of germanium (Ge) in advanced electronic nanodevices all steps of device fabrication must be controlled. This, in particular, concerns the diffusion, doping, and activation of dopants in Ge. In this paper, the mechanism of self‐ and dopant diffusion in Ge under thermal equilibrium and non‐equilibrium conditions are reviewed. Non‐equilibrium conditions can, e.g., be realized by irradiation, implantation, and the dissolution of unstable defect clusters. Defect reactions mediating dopant diffusion and dopant deactivation in Ge under different experimental conditions are discussed. Special attention is paid to the charge states of the involved point defects and their Coulomb interactions that explain numerous results on dopant diffusion and dopant deactivation. Controlling the formation of vacancies V and self‐interstitials I is the key to develop successful defect engineering strategies that are required to achieve the objectives for the fabrication of Ge‐based devices.