Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution
Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution
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DOI：
10.1063/1.1763227
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发表时间：
2004-06
影响因子：
3.2
通讯作者：
W. Pan;K. Fujiwara;N. Usami;T. Ujihara;K. Nakajima;R. Shimokawa
中科院分区：
文献类型：
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作者：
W. Pan;K. Fujiwara;N. Usami;T. Ujihara;K. Nakajima;R. Shimokawa
介绍了铸造法生长的具有微观成分分布的多晶SiGe(MC-SiGe)大块晶体太阳电池的器件性能。平均Ge组分在0%~10%范围内有系统地变化。在多晶硅(MC-Si)中添加少量的Ge可以在不影响开路电压的情况下有效地提高短路电流密度。结果表明，与基于MC-Si的太阳电池相比，MC-SiGe太阳电池的整体效率得到了提高。这一结果表明，MC-SiGe可以在不大幅增加生产成本的情况下获得更高的转换效率，是一种很有前途的替代MC-Si的候选材料。
We present device performance of solar cells based on multicrystalline SiGe (mc-SiGe) bulk crystal with microscopic compositional distribution grown by the casting method. The average Ge composition was systematically changed in the range between 0% and 10%. A small addition of Ge to multicrystalline Si (mc-Si) was found to be very effective to increase the short-circuit current density without affecting the open-circuit voltage. As a consequence, the overall efficiency of a solar cell based on mc-SiGe was improved compared with that based on mc-Si. This result demonstrates that mc-SiGe is a promising candidate to replace mc-Si since it could achieve higher conversion efficiency without drastic increase of the production cost.