Long living excited states in boron doped diamond
Long living excited states in boron doped diamond
复制标题
掺硼金刚石中的长寿命激发态
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
M. Stutzmann
中科院分区：
文献类型：
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作者：
C. Nebel;E. Rohrer;M. Stutzmann
在温度 T<190 K、能量范围 3.2–3.5 eV 下，通过光电导和光电导激发光谱检测硼掺杂金刚石中的长寿命激发态。光电导光谱在高掺杂 [(4–8)×1018 cm−3] 金刚石中显示出明显的最大值，随着掺杂密度的降低而减小。提出了一个模型，其中空穴通过补偿深缺陷（高于价带边缘 3.36 eV）被光学激发到价带中。在这里，它们被 LO 声子发射捕获，形成长寿命的硼激发能级。长寿命激发态比 1s 地电平高 200、240 和 266 meV。可以在高掺杂浓度下检测到光电流的最大值，因为相邻激发态之间的波函数重叠对于允许相邻激发态之间的跳跃跃迁非常重要。
Long living excited states in boron doped diamond are detected by photoconductivity and photoconductivity excitation spectroscopy at temperatures T<190 K in the energy regime 3.2–3.5 eV. The photoconductivity spectra show pronounced maxima in highly doped [(4–8)×1018 cm−3] diamond which decrease with decreasing doping density. A model is presented where holes are optically excited from compensating deep defects, 3.36 eV above the valence band edge, into the valence band. Here they get captured by LO phonon emission into long living excited levels of boron. The long living excited states are 200, 240, and 266 meV above the 1s ground level. Maxima in photocurrent can be detected at high doping concentrations as the wave function overlap between neighboring excited states is significant to allow hopping transitions between neighboring excited states.