Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs
Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs
复制标题
4H-SiC和2H-GaN MOS电容器和FET的比较研究
DOI：
10.1002/pssa.200925125
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Zhongda Li
中科院分区：
文献类型：
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作者：
T. Chow;H. Naik;Zhongda Li
我们对4H - SiC和2H - GaN的MOS电容器以及场效应晶体管（FET）的电学特性进行了比较表征。虽然栅极氧化工艺的逐步改进，特别是采用一氧化氮退火，已使4H - SiC MOSFET的阈值电压控制更好、亚阈值斜率降低以及场效应迁移率提高，但我们最近报道了2H - GaN MOSFET具有更优越的MOS参数。此外，我们进行了MOS栅霍尔测量以提取本征载流子浓度和MOS迁移率，结果表明2H - GaN MOSFET中沟道电子的俘获和散射都更少。（© 2009 威利 - 维奇出版社有限责任公司，德国魏恩海姆）
We have comparatively characterized the electrical characteristics of 4H‐SiC and 2H‐GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field‐effect mobility for 4H‐SiC MOSFETs, we have recently reported more superior MOS parameters for 2H‐GaN MOSFETs. In addition, we have performed MOS‐gated Hall measurements to extract the intrinsic carrier concentration and MOS mobility, indicating that both less channel electron trapping and scattering take place in 2H‐GaN MOSFETs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)