Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
复制标题
DOI：
10.4028/www.scientific.net/msf.645-648.633
复制
发表时间：
2009-10
期刊：
影响因子：
--
通讯作者：
Joshua D. Caldwell;T. Anderson;K. Hobart;J. Culbertson;G. Jernigan;F. Kub;J. Tedesco;J. Hite
中科院分区：
文献类型：
--
作者：
Joshua D. Caldwell;T. Anderson;K. Hobart;J. Culbertson;G. Jernigan;F. Kub;J. Tedesco;J. Hite
在碳化硅表面生长的外延石墨烯(EG)显示出高的载流子迁移率，与其他适合于晶片规模石墨烯制备的生长技术相比。将大面积(>；mm2)石墨烯薄膜转移到可用于特定应用的衬底上是可取的。我们通过两种方法证明了EG从4H-SiC的C面干式转移到SiO_2、GaN和Al_2O_3衬底上：1)热释放带；2)自旋的、可化学腐蚀的介质。我们将报告这些转移过程对转移的EG薄膜的电学性质的影响。
Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.