Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
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DOI：
10.1063/1.5139219
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发表时间：
2020-03-16
影响因子：
4
通讯作者：
Meyer, David J.
中科院分区：
文献类型：
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作者：
Growden, Tyler A.;Storm, David F.;Meyer, David J.
我们报道了对氮化镓/氮化铝共振隧穿二极管（RTD）中创纪录的快速开关速度的直接测量。这些通过等离子体辅助分子束外延生长的器件，在+6V偏压以下显示出三个可重复的负微分电阻（NDR）区域。观察到室温下峰谷电流比（PVCR）>2，这相较于近期的报道有了显著的提高。对数百个不同尺寸的器件进行的测量显示，成品率接近90%。由3000次扫描组成的重复性测量得出，相对于平均值的标准偏差为……
We report the direct measurement of record fast switching speeds in GaN/AlN resonant tunneling diodes (RTDs). The devices, grown by plasma-assisted molecular-beam epitaxy, displayed three repeatable negative differential resistance (NDR) regions below a bias of +6V. A room temperature peak-to-valley current ratio (PVCR)>2 was observed, which represents a marked improvement over recent reports. Measurements carried out on hundreds of devices, of varying sizes, revealed a yield of similar to 90%. Repeatability measurements consisting of 3000 sweeps resulted in a standard deviation, relative to the mean, of