Heteroepitaxy of β‐FeSi2 on unstrained and strained Si(100) surfaces
Heteroepitaxy of β‐FeSi2 on unstrained and strained Si(100) surfaces
复制标题
β-FeSi2 在无应变和应变 Si(100) 表面上的异质外延
DOI：
10.1063/1.108693
复制
发表时间：
1993
影响因子：
4
通讯作者：
J. Ott
中科院分区：
文献类型：
--
作者：
D. Peale;R. Haight;J. Ott
用低能电子衍射、X射线光电子能谱和扫描电子显微镜研究了在超高真空条件下，半导体β-FeSi_2在无应变和应变Si(100)表面异质外延生长的影响因素。我们发现，外延和清晰的LEED图形可以通过形成FeSi2模板层，然后在模板层上附加共沉积反应物来获得。通过采用应变硅衬底，进一步改善了硅化物层的质量。证明了外延硅化物区尺寸与硅衬底和硅化物层之间的晶格失配有关。
We have investigated factors influencing the heteroepitaxial growth of semiconducting β‐FeSi2 on both unstrained and strained Si(100) surfaces under ultrahigh vacuum conditions using low energy electron diffraction, x‐ray photoelectron spectroscopy, and scanning electron microscopy. We show that epitaxy and clear LEED patterns may be obtained by forming a template layer of FeSi2 followed by additional codeposition of reactants upon the template layer. Further improvement in the quality of the silicide layer is achieved by employing strained Si substrates. The dependence of the epitaxial silicide domain size on the lattice mismatch between the silicon substrate and the silicide layer is demonstrated.