High internal electric field in a graded-width InGaN/GaN quantum well:: Accurate determination by time-resolved photoluminescence spectroscopy
High internal electric field in a graded-width InGaN/GaN quantum well:: Accurate determination by time-resolved photoluminescence spectroscopy
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DOI：
10.1063/1.1351517
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发表时间：
2001-02-26
影响因子：
4
通讯作者：
Massies, J
中科院分区：
文献类型：
--
作者：
Lefebvre, P;Morel, A;Massies, J
利用时间分辨光致发光（PL）技术，在T=8 K时，研究了宽度渐变的InGaN/GaN量子阱.在整个样品中，阱宽连续变化，从5.5到2.0 nm，对应于PL峰能量在2.0和2.9 eV之间变化，PL衰减速率覆盖四个数量级。通过计算电子-空穴复合概率与阱宽，可以很好地拟合衰减时间与PL能量的关系图。唯一的拟合参数是阱中的电场，我们发现它等于2.45 +/-0.25 MV/cm，与这种类型样品的实验斯托克斯位移非常一致。(C)2001年美国物理学会。
Time-resolved photoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from similar to5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron-hole recombination probability versus well width. The only fitting parameter is the electric field in the well, which we find equal to 2.45 +/-0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples. (C) 2001 American Institute of Physics.