Evidence for surface states in a single 3 nm diameter Co3O4 nanowire
Evidence for surface states in a single 3 nm diameter Co3O4 nanowire
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DOI：
10.1063/1.3457449
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发表时间：
2010-06
影响因子：
4
通讯作者：
Yi Sun;Jiyong Yang;Rui Xu;Lin He;R. Dou;J. Nie
中科院分区：
文献类型：
--
作者：
Yi Sun;Jiyong Yang;Rui Xu;Lin He;R. Dou;J. Nie
利用低温扫描隧道显微镜和光谱技术研究了直径为3 nm的Co3O4半导体纳米线的电子局域态密度。由于量子限制效应，纳米线的导带和价带之间的能隙约为1.7 eV，与体积值∼1.5 eV相比略有提高。在带隙的费米能级附近观察到两个表面态。
The electronic local density of states of a single Co3O4 semiconductor nanowire with the diameter of 3 nm is explored using low-temperature scanning tunneling microscopy and spectroscopy. The energy gap between the conduction band and valence band of the nanowire is about 1.7 eV, which is slightly enhanced compared to the bulk value, ∼1.5 eV, due to the quantum confinement effect. Two surface states are observed locating near the Fermi level in the band gap.