Transformation Behavior of Low Temperature Crystallized TiNi Shape Memory Alloy Films
Transformation Behavior of Low Temperature Crystallized TiNi Shape Memory Alloy Films
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DOI：
10.1051/esomat/200902012
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Y. Kishi;N. Ikenaga;N. Sakudo;Z. Yajima
中科院分区：
文献类型：
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作者：
Y. Kishi;N. Ikenaga;N. Sakudo;Z. Yajima
研究了在Si（001）和聚酰亚胺衬底上沉积TiNi形状记忆合金薄膜的相变行为。一个RF磁控溅射设备配备了四个单独的共焦源，以及与基板的加热和离子辐照系统被用来使薄膜结晶。在不使用该系统的情况下，在室温衬底上沉积的薄膜是非晶的。然而，即使在473 K的衬底温度下向衬底施加脉冲偏压，也沉积结晶膜。观察了在厚度为0.025 mm的聚酰亚胺片上沉积的结晶膜的形状记忆效应。由薄膜的归一化曲率与温度的关系可知，加热过程中薄膜形状变化的起始温度为329 K，结束温度为399 K。而在冷却过程中，观察到相反的形状变化。在315 K左右，形状恢复到原来的曲率.
Transformation behavior of TiNi SMA films sputter-deposited on Si(001) and polyimide substrates was observed. An RF magnetron sputtering apparatus equipped with four separate confocal sources as well as with a heating and ion-irradiating system for substrates was used to make the films crystalline. Without using the system, the films deposited on ambient-temperature substrate have been amorphous. However, crystallized film is deposited even at 473 K of substrate temperature applying pulse bias voltage to the substrate. Shape memory effect of the crystallized film which was sputter-deposited on a polyimide sheet of 0.025 mm in thickness was observed. From the relationship between the normalized curvature of film and temperature, it was recognized that the start and finish temperatures of shape changes were 329 K and 399 K on heating process, respectively. While on cooling process, its reverse shape changes were observed. The shape was recovered to the original curvature at about 315 K.