Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates
Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates
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SiO2/Si衬底上制备的SrBi2Ta2O9薄膜的记忆性能
DOI：
10.1063/1.124771
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发表时间：
1999
影响因子：
4
通讯作者：
S. Sakai
中科院分区：
文献类型：
--
作者：
S. Xiong;S. Sakai
采用激光烧蚀、原位退火和退火后退火的方法在SiO2/Si和MgO缓冲的SiO2/Si衬底上制备了SrBi_2Ta_2O_9（SBT）铁电薄膜，并观察到其保留时间大于7天。在SiO2/Si衬底上，只有800 °C退火的样品偶尔表现出良好的记忆性能。 在MgO缓冲的SiO2/Si衬底上，即使退火后温度低至650 °C，找到良好测量点的成功概率也大大增加;它们的典型存储窗口为3.1 V，保留时间超过7天，没有严重退化。 在SBT和SiO_2/Si之间插入MgO缓冲层对金属-铁电-绝缘体-半导体结构的质量有三个积极的作用：防止铋的损失、降低晶化温度和减小漏电流。
We prepared SrBi2Ta2O9(SBT) ferroelectric thin films on SiO2/Si and on MgO buffered SiO2/Si substrates using laser ablation, in situ annealing and postannealing, and observed retention time longer than 7 days. On SiO2/Si substrates, only the samples annealed at 800 °C occasionally exhibited good memory properties. On MgO buffered SiO2/Si substrates, successful probability for finding good measuring dots increased largely even while postannealing temperature was as low as 650 °C; their typical memory window was 3.1 V and retention time over 7 days without serious degradation. The MgO buffer layer inserted between SBT and SiO2/Si may play three positive roles on the quality of metal–ferroelectric–insulator–semiconductor structure: preventing bismuth loss, lowering crystallization temperature, and decreasing leakage current.