Influence of postdeposition annealing on the properties of Ga2O3 films on SiO2 substrates
Influence of postdeposition annealing on the properties of Ga2O3 films on SiO2 substrates
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DOI：
10.1016/j.jallcom.2004.05.082
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发表时间：
2005-03-08
影响因子：
6.2
通讯作者：
Kim, NH
中科院分区：
文献类型：
--
作者：
Kim, HW;Kim, NH
我们研究了在 750-1050 摄氏度范围内退火的氧化镓 (Ga2O3) 薄膜的结构和光学性质，该薄膜是通过金属有机化学气相沉积 (MOCVD) 技术在 SiO2 衬底上生长的。我们发现非晶 Ga2O3 的沉积后退火会产生 β-Ga2O3 相晶粒。虽然沉积态 Ga2O3 薄膜的光致发光光谱显示出强烈的蓝绿 (BG) 和紫外 (UV) 发射，但高温沉积后退火导致出现更长波长的紫外带和新的绿带。 (C) 2004 Elsevier B.V. 保留所有权利。
We have investigated the structural and optical properties of annealed gallium oxide (Ga2O3) film in the range of 750-1050degreesC, which had been grown on SiO2 substrates by the metal organic chemical vapor deposition (MOCVD) technique. We revealed that postdeposition annealing of amorphous Ga2O3 generated grains in beta-Ga2O3 phase. While photoluminescence spectra of as-deposited Ga2O3 films showed strong blue-green (BG) and ultraviolet (UV) emission, postdeposition annealing at high temperatures resulted in appearance of a longer wavelength UV band and a new green band. (C) 2004 Elsevier B.V. All rights reserved.