Improved defectivity and particle control for nanoimprint lithography high-volume semiconductor manufacturing
Improved defectivity and particle control for nanoimprint lithography high-volume semiconductor manufacturing
复制标题
改善纳米压印光刻大批量半导体制造的缺陷率和颗粒控制
DOI：
10.1117/12.2257647
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Chris E. Jones
中科院分区：
文献类型：
--
作者：
T. Nakayama;M. Yonekawa;Y. Matsuoka;Hisanobu Azuma;Yukio Takabayashi;A. Aghili;M. Mizuno;Jin Choi;Chris E. Jones
压印光刻已被证明是复制纳米级特征的有效技术。喷射和闪光*压印光刻 (J-FIL*) 涉及通过喷射技术将低粘度抗蚀剂逐场沉积和曝光到基板上。将带图案的掩模放入流体中，然后流体通过毛细管作用快速流入掩模中的浮雕图案。在此填充步骤之后，抗蚀剂在紫外线辐射下交联，然后去除掩模，在基板上留下图案化的抗蚀剂。半导体行业任何光刻工艺的特定标准包括覆盖率、产量和缺陷率。本文的目的是描述在减少压印工具中的粒子添加器方面取得的技术进步。晶圆或掩模上的硬颗粒可能会在掩模上产生永久性缺陷，从而影响器件产量和掩模寿命。通过使用材料方法来减少颗粒脱落并引入气幕系统，测试台结果证明了将掩模寿命延长至超过 1000 片晶圆的潜力。
Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is cross-linked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. Criteria specific to any lithographic process for the semiconductor industry include overlay, throughput and defectivity. The purpose of this paper is to describe the technology advancements made in the reduction of particle adders in an imprint tool. Hard particles on a wafer or mask create the possibility of creating a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, test stand results demonstrate the potential for extending mask life to better than 1000 wafers.