Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment
Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment
复制标题
使用重复臭氧氧化和湿表面处理减少 GaN 高电子迁移率晶体管中的电流崩塌
DOI：
10.1109/led.2015.2445495
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发表时间：
2015-08-01
影响因子：
4.9
通讯作者：
Shen, Bo
中科院分区：
文献类型：
--
作者：
Lin, Shuxun;Wang, Maojun;Shen, Bo
这封信报道了GaN高电子迁移率晶体管（HEMT）与减少电流崩溃使用多个组合的等离子体无臭氧氧化和Si3N4钝化前的湿表面处理。处理后的AlGaN表面氧化层和分解层被有效去除，获得了完整的AlGaN表面。脉冲IV和RF功率测量表明，由于去除了不完整的表面层和无损伤的性质，电流崩塌得到了很大的抑制，为改善GaN HEMT钝化效果提供了一种有效的表面处理方法。
This letter reports a GaN high-electron mobility transistor (HEMT) with reduced current collapse using a multicycle combined plasma-free ozone oxidation and wet surface treatment before Si3N4 passivation. The surface oxide and decomposed layers could be effectively removed and a perfect AlGaN surface is obtained after the treatment. Pulsed IV and RF power measurement indicate that the current collapse is greatly suppressed due to the removal of imperfect surface layer and damage free nature, providing an effective surface treatment method to improve the effect of passivation in GaN HEMT.