SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE
SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE
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DOI：
10.1103/physrevlett.56.1972
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发表时间：
1986-05-05
影响因子：
8.6
通讯作者：
DEMUTH, JE
中科院分区：
文献类型：
--
作者：
HAMERS, RJ;TROMP, RM;DEMUTH, JE
我们获得了Si（111）-（7× 7）表面填充态和空表面态的第一个能量分辨实空间像，横向分辨率为3-′ A.这种用扫描隧道显微镜在空间上分辨这些表面状态的能力取决于一种新的方法来获取和分离几何和电子信息。我们的结果不仅与前人的光谱研究结果一致，而且直接揭示了Si（111）-（7× 7）表面态的原子位置和几何起源.
We have obtained the first energy-resolved real-space images of the filled and empty surface states of the Si (111)-(7× 7) surface, with 3-′ A lateral resolution. This ability to resolve spatially these surface states with a scanning tunneling microscope depends upon a new method to acquire and separate geometric and electronic information. Our results not only are in good agreement with previous spectroscopic studies but also directly reveal the atomic location and geometric origin of the Si (111)-(7× 7) surface states.