Properties of deposited size‐selected clusters: Reactivity of deposited silicon clusters
Properties of deposited size‐selected clusters: Reactivity of deposited silicon clusters
复制标题
沉积尺寸选定团簇的特性：沉积硅团簇的反应性
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
M. Jarrold
中科院分区：
文献类型：
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作者：
J. Bower;M. Jarrold
用X射线光电子能谱(XPS)研究了沉积的尺寸选择硅团簇(Sin，n=10、13和40-50)的室温氧化行为。选择尺寸的团簇以正离子的形式沉积在非晶态碳衬底上，电压为5 eV。硅团簇粘连概率(由卢瑟福背散射测量确定)为95%±5%。记录暴露于O2前后的XPS光谱。未氧化的团簇相对于体硅没有明显的(≥0.2 eV)核心能级移动。通过跟踪O1s和Si2p芯能级的变化来监测氧的吸附。虽然结果在性质上与体硅表面的结果相似，但O2的粘着系数要小得多(∼为0.001，而∼为0.1)。O2粘着系数与在气相中观察到的较大团簇的粘合系数相似，但不能再现气相中较小团簇反应性的显著变化。所有的..。
The room temperature oxidation of deposited size‐selected silicon clusters (Sin, n=10, 13, and 40–50) has been examined using x‐ray photoelectron spectroscopy (XPS). The size‐selected clusters were deposited as positive ions on an amorphous carbon substrate at 5 eV. Silicon cluster sticking probabilities (determined from Rutherford backscattering measurements) were 95%±5%. XPS spectra were recorded both before and after exposure to O2. The unoxidized clusters showed no significant (≥0.2 eV) core levels shifts relative to bulk silicon. Oxygen adsorption was monitored by following the evolution of the O1s and Si2p core levels. While the results are qualitatively similar to those obtained for bulk silicon surfaces, the O2 sticking coefficients are much smaller (∼0.001 compared to ∼0.1). The O2 sticking coefficients are similar to those observed for the larger clusters in the gas phase, however, the spectacular variations in the reactivity of the smaller clusters in the gas phase are not reproduced. All the d...