Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphosilicate Glass Electrolyte
Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphosilicate Glass Electrolyte
复制标题
由固态磷硅酸盐玻璃电解质选通的横向耦合无结 IZO 双层薄膜晶体管
DOI：
10.1088/0256-307x/32/3/038502
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发表时间：
2015
影响因子：
3.5
通讯作者：
Hongliang Zhang
中科院分区：
文献类型：
--
作者：
Jumei Zhou;Xiaohong Gao;Hongliang Zhang
我们描述了横向耦合无结氧化铟锌（IZO）薄膜晶体管（TFT），其中没有沟道和源/漏电极之间的结，并与固态磷硅酸盐玻璃电解质（PSG）门控。由于PSG的三维高质子导电性和横向耦合双电层（EDL）电容（>1 μF/cm 2），获得了低压（2.0 V）无结IZO TFT和双共面栅器件。一个与逻辑功能的基础上，无结的EDL-TFT演示。这种器件在pH传感器、湿度传感器、生物传感器和神经元网络模拟等方面有着广阔的应用前景。
We describe the lateral-coupled junctionless indium-zinc-oxide (IZO) thin-film transistors (TFTs) in which there are no junctions between channel and source/drain electrodes and with solid-state phosphosilicate glass electrolyte (PSG) gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double-layer (EDL) capacitance (>1 μF/cm2) of the PSG, the low voltage (2.0 V) junctionless IZO TFTs and the dual coplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.