Plasma-Assisted Chemical Vapor Deposition of TiO2 Thin Films for Highly Hydrophilic Performance
Plasma-Assisted Chemical Vapor Deposition of TiO2 Thin Films for Highly Hydrophilic Performance
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等离子体辅助化学气相沉积 TiO2 薄膜以获得高亲水性能
DOI：
10.4236/csta.2013.21001
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Y. Imai
中科院分区：
文献类型：
--
作者：
S. Yamauchi;Y. Imai
采用等离子体辅助化学气相沉积（PCVD）技术，在低于400 ℃的较低温度下，利用13.56MHz的射频功率激发氧气等离子体，在3 mAh的气压下，在玻璃衬底上生长了氧化钛薄膜，并与低压化学气相沉积（LPCVD）法生长的氧化钛薄膜进行了比较，研究了氧化钛薄膜的晶体学性质和亲水性。拉曼光谱表明，以四异丙醇钛（TTIP）为前驱体，在340 ℃以上同时加入等离子体裂解的和未裂解的TiO 2，可以形成无非晶相的锐钛矿相TiO 2薄膜。表面扫描电子显微镜图像表明，PCVD层由不同的纳米尺寸的板状柱状晶粒，在LPCVD层中的凹凸不平的微米尺寸的晶粒形成对比。在380 ℃下生长的PCVD层上观察到在黑暗中约5 °的极小的水接触角和通过光功率密度低至50 W/cm 2的UV照射快速转化为超亲水性，而在LPCVD层上观察到大于40 °的大的初始接触角和对UV照射的响应是渐进的。
Titanium-oxide layer was grown on glass substrate by plasma-assisted chemical vapor deposition (PCVD) using oxygen gas plasma excited by radio-frequency power at 13.56 MHz in the pressure as low as 3mtorr at relatively low temperature below 400oC, and studied on the crystallographic properties with the hydrophilic behavior comparing to the layer deposited by low-pressure chemical vapor deposition (LPCVD). Raman spectra indicated anatase-phase TiO2 layer without amorphous-phase could be formed above 340oC by simultaneous supply of plasma-cracked and non-cracked titanium-tetra-iso-propoxide (TTIP) used as preliminary precursor. Surface Scanning Electron Microscope images indicated the PCVD-layer consists of distinct nanometer-size plate-like columnar grains, in contrast to rugged micrometer-size grains in the LPCVD-layer. Extremely small water contact angle about 5o in dark and the quick conversion to super-hydrophilicity by UV-irradiation with a light-power density as low as 50 W/cm2 were observed on the PCVD- layer grown at 380oC, while the large initial contact angle was above 40o and the response for the UV-irradiation was gradual on the LPCVD-layer.