Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous silicon
Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous silicon
复制标题
直接测量非晶硅中“爆炸性”传播的掩埋熔融层的速度和厚度
DOI：
10.1063/1.96918
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发表时间：
1986
影响因子：
4
通讯作者：
D. N. Mashburn
中科院分区：
文献类型：
--
作者：
D. Lowndes;G. Jellison;S. Pennycook;S. Withrow;D. N. Mashburn
采用纳秒分辨率同时进行红外（1152 nm）和可见光（633 nm）反射率测量来研究离子注入非晶硅中脉冲 KrF 激光诱导的“爆炸性”传播埋藏熔融层的初始形成和后续运动。埋层速度随着表面以下深度的增加而减小，但随着KrF激光能量密度的增加而增加；观察到的最大速度约为 14 m/s，这意味着过冷速度关系约为 14 K/(m/s)。使用Z对比扫描透射电子显微镜形成埋层传输的注入Cu离子的直接化学图像，结果表明最终埋层厚度<15 nm。
Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser‐induced ‘‘explosively’’ propagating buried molten layers in ion implantation‐amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling‐velocity relationship of ∼14 K/(m/s). Z‐contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm.