Area-Selective Atomic Layer Deposition of Metal Oxides on DNA Nanostructures and Its Applications
Area-Selective Atomic Layer Deposition of Metal Oxides on DNA Nanostructures and Its Applications
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DOI：
10.1021/acsnano.0c04493
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发表时间：
2020-10-27
期刊：
影响因子：
17.1
通讯作者：
Liu, Haitao
中科院分区：
文献类型：
--
作者：
Hui, Liwei;Nixon, Rachel;Liu, Haitao
我们展示了DNA纳米结构上氧化物的区域选择性原子层沉积（ALD）。在聚苯乙烯（PS）基底上沉积的2D和3D DNA纳米结构上成功地实现了Al 2 O3、TiO 2和HfO 2的区域选择性ALD。所得的DNA-无机混合结构被用作硬掩模，以实现用于光刻应用的Si晶片的深蚀刻。ALD是一种广泛应用于涂层和薄膜沉积的工艺;我们的工作指出了一种使用DNA模板来图案化氧化物材料并增强DNA纳米结构的化学/物理稳定性以用于表面工程的方法。
We demonstrate area-selective atomic layer deposition (ALD) of oxides on DNA nanostructures. Area-selective ALD of Al2O3, TiO2, and HfO2 was successfully achieved on both 2D and 3D DNA nanostructures deposited on a polystyrene (PS) substrate. The resulting DNA-inorganic hybrid structure was used as a hard mask to achieve deep etching of a Si wafer for antireflection applications. ALD is a widely used process in coating and thin film deposition; our work points to a way to pattern oxide materials using DNA templates and to enhance the chemical/physical stability of DNA nanostructures for applications in surface engineering.