Zn preadsorption on GaAs(100)2 × 4 prior to ZnSe growth
Zn preadsorption on GaAs(100)2 × 4 prior to ZnSe growth
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ZnSe 生长前 Zn 在 GaAs(100)2 × 4 上的预吸附
DOI：
10.1116/1.588946
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发表时间：
1996
影响因子：
1.4
通讯作者：
A. Franciosi
中科院分区：
文献类型：
--
作者：
S. Heun;J. Paggel;S. Rubini;A. Franciosi
本文系统地研究了ZnSe生长前Zn在GaAs（100）2 × 4上的吸附。在290 ° C的典型ZnSe生长温度下，发现Zn覆盖率仅随暴露时间的增加而增加，使得仅Zn的亚单层覆盖率可以被吸收并在GaAs衬底上保持稳定。在室温下，并且通常在低于150 - 200 ° C的温度下，Zn粘附系数的急剧增加使得单层和多层吸附成为可能。然而，随后在ZnSe生长温度下的退火从表面去除了大部分Zn原子，使得在初始生长表面上仅发现亚单层覆盖。我们讨论了可能的作用，Zn作为ZnSe和GaAs之间的界面控制层，在我们的研究结果。
We report here a systematic study of the adsorption of Zn on GaAs(100)2×4 prior to ZnSe growth. At the typical ZnSe growth temperature of 290 °C, the Zn coverage was found to increase only logarithmically with increasing exposure time, so that only submonolayer coverages of Zn can be absorbed and remain stable on the GaAs substrates. At room temperature, and in general at temperatures below 150–200 °C, a drastic increase in the Zn sticking coefficient makes monolayer and multilayer adsorption possible. However, subsequent annealing at the ZnSe growth temperature removes most of the Zn atoms from the surface, so that only submonolayer coverages are found on the initial growth surface. We discuss the possible role of Zn as an interface control layer between ZnSe and GaAs in the light of our results.