Low-temperature buffer layer effects on the quality of ZnTe epilayers grown on sapphire substrates
Low-temperature buffer layer effects on the quality of ZnTe epilayers grown on sapphire substrates
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DOI：
10.1063/1.3452356
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发表时间：
2010-06
影响因子：
3.2
通讯作者：
Q. Guo;M. Nada;Yaliu Ding;Tooru Tanaka;M. Nishio
中科院分区：
文献类型：
--
作者：
Q. Guo;M. Nada;Yaliu Ding;Tooru Tanaka;M. Nishio
研究了低温ZnTe缓冲层对（0001）蓝宝石衬底上金属有机物气相外延生长的ZnTe外延层的结构、光学性质和表面形貌的影响。X射线衍射、X射线摇摆曲线、光致发光谱、拉曼光谱和原子力显微镜分析表明，在ZnTe外延层和蓝宝石衬底之间引入低温ZnTe缓冲层可以改善ZnTe外延层的晶体质量、光学性质和表面粗糙度，低温ZnTe缓冲层的厚度是获得高质量ZnTe外延层的关键。
The effects of a low-temperature ZnTe buffer layer on the structural, optical properties and surface morphology of ZnTe epilayers grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy are investigated. X-ray diffraction, x-ray rocking curves, photoluminescence spectra, Raman spectra, and atomic force microscopy analysis reveal that the crystal quality, optical properties, and surface roughness of ZnTe epilayers can be improved by introducing a low-temperature ZnTe buffer layer between ZnTe epilayer and sapphire substrate, and that the thickness of the low-temperature ZnTe buffer layer is critical for obtaining a high quality ZnTe epilayer.