Real-time observation of the interface between SiC and a liquid alloy and its application to the dissolution behavior of SiC at 1573 K
Real-time observation of the interface between SiC and a liquid alloy and its application to the dissolution behavior of SiC at 1573 K
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DOI：
10.1063/1.4837575
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发表时间：
2013-12-07
影响因子：
3.2
通讯作者：
Sakamoto, Hidemitsu
中科院分区：
文献类型：
--
作者：
Kawanishi, Sakiko;Yoshikawa, Takeshi;Sakamoto, Hidemitsu
实时观察碳化硅（SiC）与液态合金之间的高温界面，对于优化溶液法生长高质量SiC晶体的条件是必不可少的。本文采用干涉观测法测量界面高度轮廓，建立了界面的实时观测。测量了4 H-SiC的折射率随温度的变化关系，最高可达1773 K。然后在1573 K下对SiC/合金界面进行了高度测量。从干涉观察，聚束台阶高度小于10 nm的测量。利用该技术对1573 K下SiC在Fe-Si合金熔体中的溶解行为进行了实时观测。从碳在溶液中的传质和界面反应两个方面讨论了溶解动力学。(C)2013 AIP Publishing LLC.
Real-time observation of the high temperature interface between silicon carbide (SiC) and liquid alloy is indispensable to optimize the conditions for producing high quality SiC crystals by the solution growth method. In this work, real-time observation of the interface was established by using the interference observation to measure the height profile of the interface. The temperature dependence of the refractive index of 4H-SiC was measured up to 1773 K. The height measurement was then carried out for the SiC/alloy interface at 1573 K. From interference observation, bunched step heights of less than 10 nm were measured. The developed technique was applied for the real-time observation of dissolution behavior of SiC into molten Fe-Si alloy at 1573 K. The dissolution kinetics was discussed in terms of carbon mass transfer in the solution and interfacial reaction. (C) 2013 AIP Publishing LLC.