Layered ruthenium oxides: From band metal to Mott insulator
Layered ruthenium oxides: From band metal to Mott insulator
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DOI：
10.1103/physrevlett.81.2747
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发表时间：
1998-09-28
影响因子：
8.6
通讯作者：
Shen, ZX
中科院分区：
文献类型：
--
作者：
Puchkov, AV;Schabel, MC;Shen, ZX
我们目前的第一个光学和角度分辨光电发射研究的层状氧化钌系统与各种钙/锶取代水平的结果。使用双平面（ST 1-xCax）（3）Ru 2 O 7和单平面Ca 2 RuO 4晶体，我们能够研究从能带金属（Sr 3 Ru 2 O 7）到“坏”金属（Ca 3 Ru 2 O 7）再到Mott-Hubbard绝缘体（Ca 2 RuO 4）的电子性质的演变。除了Mott-Hubbard金属-绝缘体转变（MIT）之外，我们还发现了临界x = 0.33时电子性质的质的变化。我们认为后者是量子相变到反铁磁相的结果，该相先于真实的莫特-哈伯德麻省理工学院。[S0031-9007（98）07196-8]。
We present results of the first optical and angle-resolved photoemission study on a layered ruthenium oxide system with various Ca/Sr substitution levels. Using two-plane (ST1-xCax)(3)RU2O7 and one-plane Ca2RuO4, crystals we were able to study evolution of the electronic properties in a range from a band metal (Sr3RU2O7) to a "bad" metal (Ca3Ru2O7) to a Mott-Hubbard insulator (Ca2RuO4). Apart from a Mott-Hubbard metal-insulator transition (MIT), we have uncovered a qualitative change of the electronic properties at a critical x = 0.33. We suggest that the latter is a result of a quantum phase transition into an antiferromagnetic phase that precedes the real Mott-Hubbard MIT. [S0031-9007(98)07196-8].