Structural analysis of the SiO2/Si100 interface by means of photoelectron diffraction.
Structural analysis of the SiO2/Si100 interface by means of photoelectron diffraction.
复制标题
通过光电子衍射对 SiO2/Si100 界面进行结构分析。
DOI：
10.1103/physrevlett.93.126101
复制
发表时间：
2004
影响因子：
8.6
通讯作者：
C. Westphal
中科院分区：
文献类型：
--
作者：
S. Dreiner;M. Schürmann;C. Westphal
利用角扫描光电子衍射研究了热生长SiO2薄膜与Si（100）界面处Si原子的局部环境。通过对si2p核能级光谱的最小二乘拟合，得到了Si各氧化态的实验光电子衍射图。将衍射图与含r因子分析的多次散射计算进行了比较。在所提出的桥键界面模型中，实验数据与模拟数据非常吻合[物理]。教化。84,4393(2000)]。
The local environment of Si atoms at the interface between a thermally grown SiO2 film and Si(100) was studied by angle-scanned photoelectron diffraction. Experimental photoelectron diffraction patterns for each Si oxidation state were obtained from the results of least squares fitting on Si 2p core-level spectra. A comparison of the diffraction patterns with multiple-scattering calculations including an R-factor analysis was performed. An excellent agreement between experimental and simulated data was achieved within the proposed bridge-bonded interface model [Phys. Rev. Lett. 84, 4393 (2000)]].