Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material
Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material
复制标题
DOI：
10.1063/1.121982
复制
发表时间：
1998-08-10
影响因子：
4
通讯作者：
Leo, K
中科院分区：
文献类型：
--
作者：
Blochwitz, J;Pfeiffer, M;Leo, K
我们发现，掺杂的传输层可以显着提高有机发光二极管（OLED）的性能。与未掺杂的钒酞菁（VOPc）的OLED相比，含有有意掺杂有四氰基醌二甲胺（F-4-TCNQ）的钒酞菁（VOPc）空穴传输层的二极管的电致发光起始电压降低高达一个数量级。我们的器件的改进的性能可以通过改进的导电性和更好的注入掺杂的传输层来解释。(C)1998年美国物理学会。
We show that doping of the transport layers can strikingly improve the properties of organic light emitting diodes (OLEDs). The electroluminescence onset voltage of diodes containing an vanadyl-phthalocyanine (VOPc) hole transport layer intentionally doped with tetrafluorotetracyano-quinodimethan (F-4-TCNQ) is reduced by up to an order of magnitude compared to OLED with undoped VOPc. The improved properties of our devices can be explained by the improved conductivity and better injection for a doped transport layer. (C) 1998 American Institute of Physics.