Spin-hall effect in chiral electron systems: From semiconductor heterostructures to topological insulators
Spin-hall effect in chiral electron systems: From semiconductor heterostructures to topological insulators
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手性电子系统中的自旋霍尔效应：从半导体异质结构到拓扑绝缘体
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
E. Mishchenko
中科院分区：
文献类型：
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作者：
P. Silvestrov;E. Mishchenko
介观自旋霍尔效应的现象表现为在弹道导体的边缘，或者更一般地，在电子密度不同的区域的非平衡自旋积累(由电流驱动)。本文回顾了我们在具有Rashba/Dresselhaus自旋轨道相互作用的弹道二维半导体异质结中自旋积累的最新结果，并推广了以前发展的预测三维拓扑绝缘体表面是否存在自旋-霍尔效应的方法。新的自旋霍尔效应的主要区别在于它的大小，预计它比半导体异质结中的自旋霍尔效应强得多。这是因为在半导体中，自旋积累是由于小的自旋-轨道相互作用而出现的，而自旋-轨道构成了拓扑绝缘体哈密顿量中的主导项。
The phenomenon of mesoscopic Spin-Hall effect reveals in a nonequilibrium spin accumulation (driven by electric current) at the edges of a ballistic conductor or, more generally, in the regions with varying electron density. In this paper we review our recent results on spin accumulation in ballistic two-dimensional semiconductor heterostructures with Rashba/Dresselhaus spin orbit interactions, and extend the method developed previously to predict the existince of spin-Hall effect on the surface of three-dimensional topological insulators. The major difference of the new Spin-Hall effect is its magnitude, which is predicted to be much stronger than in semiconductor heterostructures. This happens because in semiconductors the spin accumulation appears due to a small spin-orbit interaction, while the spin-orbit constitutes a leading term in the Hamiltonian of topological insulator.